SFB021N80C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SFB021N80C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.7 V
   Qgⓘ - Carga de la puerta: 167 nC
   trⓘ - Tiempo de subida: 19.5 nS
   Cossⓘ - Capacitancia de salida: 2100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: TO-263

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SFB021N80C3 Datasheet (PDF)

..1. Size:1945K cn scilicon
sfp024n80c3 sfb021n80c3.pdf

SFP024N80C3,SFB021N80C3N-MOSFET 80V, 1.9m, 120AProduct SummaryFeaturesVDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteriaRDS(on) typ. 1.9m Fast switchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive General purpose applicationsDGSSFP024N80C3 SFB021N80C3Package Marking and

5.1. Size:1314K cn scilicon
sfp024n80i3 sfb021n80i3.pdf

SFP024N80I3,SFB021N80I3N-MOSFET 80V, 1.9m, 120AProduct SummaryFeaturesVDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteriaRDS(on) typ. 1.9m Fast switchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive General purpose applicationsDGSSFP024N80I3 SFB021N80I3Package Marking and

9.1. Size:1334K cn scilicon
sfp028n100c3 sfb025n100c3.pdf

SFP028N100C3,SFB025N100C3N-MOSFET 100V, 2.4m, 120AFeaturesProduct Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on) typ. 2.4m Fast SwitchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and driveDC/DC Converter General Purpose ApplicationsDGSSFP028N100C3 SFB025N100C3Package Marking and Orde

9.2. Size:1951K cn scilicon
sfp026n100c3 sfb024n100c3.pdf

SFP026N100C3,SFB024N100C3 N-MOSFET 100V, 2.1m, 210AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.1m DS(on) typ. Fast switchingI 210A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manage

9.3. Size:7215K cn scilicon
sfp030n100c3 sfb027n100c3.pdf

SFP030N100C3, SFB027N100C3 N-MOSFET 100V, 2.5m, 190AProduct SummaryFeature High Speed Power SwitchingVDS100V Enhanced Body diode dv/dt capabilityRDS(on)2.5m Enhanced Avalanche RuggednessID 190A100% DVDS TestedApplication Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested100%

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