SFB021N80C3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFB021N80C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19.5 nS

Cossⓘ - Capacitancia de salida: 2100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm

Encapsulados: TO-263

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SFB021N80C3 datasheet

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 sfp024n80c3 sfb021n80c3.pdf pdf_icon

SFB021N80C3

SFP024N80C3,SFB021N80C3 N-MOSFET 80V, 1.9m , 120A Product Summary Features VDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteria RDS(on) typ. 1.9m Fast switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive General purpose applications D G S SFP024N80C3 SFB021N80C3 Package Marking and

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 sfp024n80i3 sfb021n80i3.pdf pdf_icon

SFB021N80C3

SFP024N80I3,SFB021N80I3 N-MOSFET 80V, 1.9m , 120A Product Summary Features VDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteria RDS(on) typ. 1.9m Fast switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive General purpose applications D G S SFP024N80I3 SFB021N80I3 Package Marking and

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 sfp028n100c3 sfb025n100c3.pdf pdf_icon

SFB021N80C3

SFP028N100C3,SFB025N100C3 N-MOSFET 100V, 2.4m , 120A Features Product Summary Enhancement Mode VDS 100V Very Low On-Resistance RDS(on) typ. 2.4m Fast Switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive DC/DC Converter General Purpose Applications D G S SFP028N100C3 SFB025N100C3 Package Marking and Orde

 9.2. Size:1951K  cn scilicon
 sfp026n100c3 sfb024n100c3.pdf pdf_icon

SFB021N80C3

SFP026N100C3,SFB024N100C3 N-MOSFET 100V, 2.1m , 210A Features Product Summary Low on resistance V 100V DS Low gate charge R 2.1m DS(on) typ. Fast switching I 210A D(Silicon Limited) High avalanche current Low reverse transfer capacitances 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manage

MOSTRAR MÁS

Otros transistores... HTS220C04, HTS240B03, HTS280C03, HTS410P06, HTS450P03, HTS500B03, HTS600A06, HTS600C06, IRF9540, SFB021N80I3, SFB024N100C3, SFB025N100C3, SFB027N100C3, SFB030N100C3, SFB030N85C3, SFB032N95C3, SFB034N80C3