SFB021N80C3 Todos los transistores

 

SFB021N80C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFB021N80C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 230 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 120 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.7 V
   Carga de la puerta (Qg): 167 nC
   Tiempo de subida (tr): 19.5 nS
   Conductancia de drenaje-sustrato (Cd): 2100 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0021 Ohm
   Paquete / Cubierta: TO-263

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SFB021N80C3 Datasheet (PDF)

 ..1. Size:1945K  cn scilicon
sfp024n80c3 sfb021n80c3.pdf

SFB021N80C3
SFB021N80C3

SFP024N80C3,SFB021N80C3N-MOSFET 80V, 1.9m, 120AProduct SummaryFeaturesVDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteriaRDS(on) typ. 1.9m Fast switchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive General purpose applicationsDGSSFP024N80C3 SFB021N80C3Package Marking and

 5.1. Size:1314K  cn scilicon
sfp024n80i3 sfb021n80i3.pdf

SFB021N80C3
SFB021N80C3

SFP024N80I3,SFB021N80I3N-MOSFET 80V, 1.9m, 120AProduct SummaryFeaturesVDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteriaRDS(on) typ. 1.9m Fast switchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive General purpose applicationsDGSSFP024N80I3 SFB021N80I3Package Marking and

 9.1. Size:1334K  cn scilicon
sfp028n100c3 sfb025n100c3.pdf

SFB021N80C3
SFB021N80C3

SFP028N100C3,SFB025N100C3N-MOSFET 100V, 2.4m, 120AFeaturesProduct Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on) typ. 2.4m Fast SwitchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and driveDC/DC Converter General Purpose ApplicationsDGSSFP028N100C3 SFB025N100C3Package Marking and Orde

 9.2. Size:1951K  cn scilicon
sfp026n100c3 sfb024n100c3.pdf

SFB021N80C3
SFB021N80C3

SFP026N100C3,SFB024N100C3 N-MOSFET 100V, 2.1m, 210AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.1m DS(on) typ. Fast switchingI 210A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manage

 9.3. Size:7215K  cn scilicon
sfp030n100c3 sfb027n100c3.pdf

SFB021N80C3
SFB021N80C3

SFP030N100C3, SFB027N100C3 N-MOSFET 100V, 2.5m, 190AProduct SummaryFeature High Speed Power SwitchingVDS100V Enhanced Body diode dv/dt capabilityRDS(on)2.5m Enhanced Avalanche RuggednessID 190A100% DVDS TestedApplication Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested100%

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