All MOSFET. SFB021N80C3 Datasheet

 

SFB021N80C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFB021N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 19.5 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: TO-263

 SFB021N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFB021N80C3 Datasheet (PDF)

 ..1. Size:1945K  cn scilicon
 sfp024n80c3 sfb021n80c3.pdf

SFB021N80C3 SFB021N80C3

SFP024N80C3,SFB021N80C3N-MOSFET 80V, 1.9m, 120AProduct SummaryFeaturesVDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteriaRDS(on) typ. 1.9m Fast switchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive General purpose applicationsDGSSFP024N80C3 SFB021N80C3Package Marking and

 5.1. Size:1314K  cn scilicon
 sfp024n80i3 sfb021n80i3.pdf

SFB021N80C3 SFB021N80C3

SFP024N80I3,SFB021N80I3N-MOSFET 80V, 1.9m, 120AProduct SummaryFeaturesVDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteriaRDS(on) typ. 1.9m Fast switchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive General purpose applicationsDGSSFP024N80I3 SFB021N80I3Package Marking and

 9.1. Size:1334K  cn scilicon
 sfp028n100c3 sfb025n100c3.pdf

SFB021N80C3 SFB021N80C3

SFP028N100C3,SFB025N100C3N-MOSFET 100V, 2.4m, 120AFeaturesProduct Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on) typ. 2.4m Fast SwitchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and driveDC/DC Converter General Purpose ApplicationsDGSSFP028N100C3 SFB025N100C3Package Marking and Orde

 9.2. Size:1951K  cn scilicon
 sfp026n100c3 sfb024n100c3.pdf

SFB021N80C3 SFB021N80C3

SFP026N100C3,SFB024N100C3 N-MOSFET 100V, 2.1m, 210AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.1m DS(on) typ. Fast switchingI 210A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manage

 9.3. Size:7215K  cn scilicon
 sfp030n100c3 sfb027n100c3.pdf

SFB021N80C3 SFB021N80C3

SFP030N100C3, SFB027N100C3 N-MOSFET 100V, 2.5m, 190AProduct SummaryFeature High Speed Power SwitchingVDS100V Enhanced Body diode dv/dt capabilityRDS(on)2.5m Enhanced Avalanche RuggednessID 190A100% DVDS TestedApplication Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested100%

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SVFP7N65CDTR

 

 
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