SFB049N80C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFB049N80C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 188 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13.1 nS
Cossⓘ - Capacitancia de salida: 969 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de SFB049N80C3 MOSFET
SFB049N80C3 Datasheet (PDF)
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Otros transistores... SFB042N100BC3 , SFB042N100C3 , SFB043N150C3 , SFB044N100C3 , SFB046N80C3 , SFB046N90C3 , SFB047N150C3 , SFB049N80BI3 , AO4407 , SFB050N135C3 , SFB052N100AC2 , SFB052N100BC2 , SFB052N100C2 , SFB052N100C3 , SFB052N80C2 , SFB052N85C3 , SFB052N90C3 .
History: AP6P070S | STP10NK80Z
History: AP6P070S | STP10NK80Z



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