SFB049N80C3 Datasheet and Replacement
Type Designator: SFB049N80C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 13.1 nS
Cossⓘ - Output Capacitance: 969 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
Package: TO-263
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SFB049N80C3 Datasheet (PDF)
sfp052n80c3 sfb049n80c3.pdf

Enhancement Mode Very Low On-Resistance Fast Switching Motor Control and Drive
sfp052n80bi3 sfb049n80bi3.pdf

SFP052N80BI3,SFB049N80BI3 N-MOSFET 80V, 4.4m, 120AFeatures Product Summary Enhancement Mode VDS80V Very Low On-Resistance RDS(on)4.4m Fast Switching ID 120A100% DVDS TestedApplications100% Avalanche Tested Light Electric Vehicles100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested
sfp048n150c3 sfb047n150c3.pdf

SFP048N150C3,SFB047N150C3 N-MOSFET 150V, 4m, 200AFeatures Product Summary Low on resistanceV 150V DS Low gate chargeR 4m DS(on) typ. Fast switchingI 200A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Managemen
sfp045n100c3 sfb042n100c3.pdf

SFP045N100C3,SFB042N100C3 N-MOSFET 100V, 3.9m, 120AFeatures Product Summary Extremely low on-resistance RDS(on) VDS100V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 3.9m Qualified according to JEDEC criteria IDR 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested Battery management UPS (Uninter
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CHM85A3PAGP | STU20L01 | SFFX054Z
Keywords - SFB049N80C3 MOSFET datasheet
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History: CHM85A3PAGP | STU20L01 | SFFX054Z



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