SFB068N150C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SFB068N150C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 686 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET SFB068N150C3

SFB068N150C3 Datasheet (PDF)

..1. Size:781K cn scilicon
sfp069n150c3 sfb068n150c3.pdf

SFP069N150C3,SFB068N150C3 N-MOSFET 150V, 6.0m, 140AFeatures Product Summary High Speed Power Smooth SwitchingV 150V DS Enhanced Body diode dv/dt capabilityR 6.0m DS(on) Enhanced Avalanche RuggednessI 140A D100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC Converter

7.1. Size:581K cn scilicon
sfp070n90c3 sfb068n90c3.pdf

SFP070N90C3,SFB068N90C3 N-MOSFET 90V, 5.6m, 120AFeatures Product Summary Low on resistanceV 90V DS Low gate chargeR 5.6m DS(on) typ. Fast switchingI 120A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and A

9.1. Size:611K cn scilicon
sfp065n70c3 sfb063n70c3.pdf

SFP065N70C3,SFB063N70C3 N-MOSFET 70V, 5.4m, 100AFeatures Product Summary Low on resistanceV 70V DS Low gate chargeR 5.4m DS(on) typ. Fast switchingI 100A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and

9.2. Size:7153K cn scilicon
sfp120n80a sfb120n80a sfp066n80ac3 sfb063n80ac3.pdf

SFP120N80A,SFB120N80ASFP066N80AC3,SFB063N80AC3 N-MOSFET 80V, 5.5m, 120AFeatures Product Summary Enhancement Mode VDS80V Very Low On-Resistance RDS(on)5.5m Fast Switching ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100

9.3. Size:3369K cn scilicon
sfp070n80c2 sfb067n80c2.pdf

SFP070N80C2, SFB067N80C2 N-MOSFET 80V, 6.0m, 118AProduct SummaryGeneral DescriptionVDS80V Trench Power technology Low RDS(ON) RDS(on)6.0m Low Gate ChargeID 118A Optimized for fast-switching applications100% DVDS TestedApplications 100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested S

9.4. Size:1326K cn scilicon
sfp066n80c3 sfb063n80c3.pdf

SFP066N80C3,SFB063N80C3N-MOSFET 80V, 5.5m, 105AFeatures Product Summary Enhancement ModeVDS80V Very Low On-ResistanceRDS(on)5.5m Fast SwitchingID 105A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche TestedBatt

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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