SFB068N150C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFB068N150C3
Marking Code: 068N150C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 75 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 686 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO-263
SFB068N150C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFB068N150C3 Datasheet (PDF)
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sfp070n80c2 sfb067n80c2.pdf
SFP070N80C2, SFB067N80C2 N-MOSFET 80V, 6.0m, 118AProduct SummaryGeneral DescriptionVDS80V Trench Power technology Low RDS(ON) RDS(on)6.0m Low Gate ChargeID 118A Optimized for fast-switching applications100% DVDS TestedApplications 100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested S
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