FDT434P Todos los transistores

 ..1. Size:233K  fairchild semi
 fdt434p.pdf

April 2011 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.5 A, 20 V. RDS(ON) = 0.050 @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 0.070 @ VGS = 2.5 V. PowerTrench process that has been especially tailored to minimize the on-state r

 ..2. Size:1501K  cn vbsemi
 fdt434p.pdf

FDT434P www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load S

 9.1. Size:145K  fairchild semi
 fdt439n.pdf

June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor 6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 V is produced using Fairchild Semiconductor's proprietary, RDS(on) = 0.058 @ VGS = 2.5 V high cell density, DMOS technology. This very high density process is especia

 9.2. Size:211K  onsemi
 fdt439n.pdf

June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor 6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 V is produced using Fairchild Semiconductor's proprietary, RDS(on) = 0.058 @ VGS = 2.5 V high cell density, DMOS technology. This very high density process is especia

 9.3. Size:924K  cn vbsemi
 fdt439n.pdf

FDT439N www.VBsemi.tw www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.019 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.021 ID (A) 7 Configuration Single D SOT-223 G D S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwis