All MOSFET. FDT434P Datasheet

 

FDT434P MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDT434P
   Marking Code: 434
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT223

 FDT434P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDT434P Datasheet (PDF)

 ..1. Size:233K  fairchild semi
 fdt434p.pdf

FDT434P FDT434P

April 2011FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.5 A, 20 V. RDS(ON) = 0.050 @ VGS = 4.5 V using Fairchild Semiconductors advancedRDS(ON) = 0.070 @ VGS = 2.5 V. PowerTrench process that has been especially tailored to minimize the on-state r

 ..2. Size:1501K  cn vbsemi
 fdt434p.pdf

FDT434P FDT434P

FDT434Pwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Load S

 9.1. Size:145K  fairchild semi
 fdt439n.pdf

FDT434P FDT434P

June 1999FDT439NN-Channel 2.5V Specified Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel Enhancement mode field effect transistor 6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 Vis produced using Fairchild Semiconductor's proprietary,RDS(on) = 0.058 @ VGS = 2.5 Vhigh cell density, DMOS technology. This very highdensity process is especia

 9.2. Size:211K  onsemi
 fdt439n.pdf

FDT434P FDT434P

June 1999FDT439NN-Channel 2.5V Specified Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel Enhancement mode field effect transistor 6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 Vis produced using Fairchild Semiconductor's proprietary,RDS(on) = 0.058 @ VGS = 2.5 Vhigh cell density, DMOS technology. This very highdensity process is especia

 9.3. Size:924K  cn vbsemi
 fdt439n.pdf

FDT434P FDT434P

FDT439Nwww.VBsemi.twwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwis

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK7909-75AIE

 

 
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