FDT434P MOSFET Datasheet: P-Ch, 20V, 6A. Full specification with pinout and replacement list

FDT434P Specs and Replacement

Type Designator: FDT434P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT223

FDT434P substitution

- MOSFET ⓘ Cross-Reference Search

FDT434P datasheet

..1. Size:233K fairchild semi
fdt434p.pdf pdf_icon

April 2011 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.5 A, 20 V. RDS(ON) = 0.050 @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 0.070 @ VGS = 2.5 V. PowerTrench process that has been especially tailored to minimize the on-state r... See More ⇒

..2. Size:1501K cn vbsemi
fdt434p.pdf pdf_icon

FDT434P www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load S... See More ⇒

9.1. Size:145K fairchild semi
fdt439n.pdf pdf_icon

June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor 6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 V is produced using Fairchild Semiconductor's proprietary, RDS(on) = 0.058 @ VGS = 2.5 V high cell density, DMOS technology. This very high density process is especia... See More ⇒

9.2. Size:211K onsemi
fdt439n.pdf pdf_icon