FDT458P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDT458P
   Código: 458P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 2.5 nC
   trⓘ - Tiempo de subida: 12.5 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET FDT458P

FDT458P Datasheet (PDF)

..1. Size:99K fairchild semi
fdt458p.pdf

June 2001 FDT458P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 3.4 A, 30 V. R = 130 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 200 m @ V = 4.5 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers, and battery chargers. Fast

..2. Size:274K onsemi
fdt458p.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:95K fairchild semi
fdt459n.pdf

March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect6.5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 Vtransistors are produced using Fairchild's proprietary, highRDS(ON) = 0.055 @ VGS = 4.5 V. cell density, DMOS technology. This very high densityprocess is especially tailored to mini

9.2. Size:103K fairchild semi
fdt457n.pdf

August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V transistors are produced using Fairchild's proprietary, highRDS(ON) = 0.090 @ VGS = 4.5 V. cell density, DMOS technology. This very high densityprocess is especially tailored to mini

9.3. Size:196K onsemi
fdt457n.pdf

FDT457NN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 Vtransistors are produced using ON Semiconductor's RDS(ON) = 0.090 @ VGS = 4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize

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