FDT458P MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDT458P datasheet

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June 2001 FDT458P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 3.4 A, 30 V. R = 130 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 200 m @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers, and battery chargers. Fast

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 6.5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.055 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to mini

9.2. Size:103K fairchild semi
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August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.090 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to mini