FDT458P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

June 2001 FDT458P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 3.4 A, 30 V. R = 130 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 200 m @ V = 4.5 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers, and battery chargers. Fast

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect6.5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 Vtransistors are produced using Fairchild's proprietary, highRDS(ON) = 0.055 @ VGS = 4.5 V. cell density, DMOS technology. This very high densityprocess is especially tailored to mini

August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V transistors are produced using Fairchild's proprietary, highRDS(ON) = 0.090 @ VGS = 4.5 V. cell density, DMOS technology. This very high densityprocess is especially tailored to mini

FDT457NN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 Vtransistors are produced using ON Semiconductor's RDS(ON) = 0.090 @ VGS = 4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize