Справочник MOSFET. FDT458P

 

FDT458P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDT458P
   Маркировка: 458P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 2.5 nC
   trⓘ - Время нарастания: 12.5 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для FDT458P

 

 

FDT458P Datasheet (PDF)

 ..1. Size:99K  fairchild semi
 fdt458p.pdf

FDT458P FDT458P

June 2001 FDT458P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 3.4 A, 30 V. R = 130 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 200 m @ V = 4.5 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers, and battery chargers. Fast

 ..2. Size:274K  onsemi
 fdt458p.pdf

FDT458P FDT458P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:95K  fairchild semi
 fdt459n.pdf

FDT458P FDT458P

March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect6.5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 Vtransistors are produced using Fairchild's proprietary, highRDS(ON) = 0.055 @ VGS = 4.5 V. cell density, DMOS technology. This very high densityprocess is especially tailored to mini

 9.2. Size:103K  fairchild semi
 fdt457n.pdf

FDT458P FDT458P

August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V transistors are produced using Fairchild's proprietary, highRDS(ON) = 0.090 @ VGS = 4.5 V. cell density, DMOS technology. This very high densityprocess is especially tailored to mini

 9.3. Size:196K  onsemi
 fdt457n.pdf

FDT458P FDT458P

FDT457NN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 Vtransistors are produced using ON Semiconductor's RDS(ON) = 0.090 @ VGS = 4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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