SFW025N100I3 Todos los transistores

 

SFW025N100I3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFW025N100I3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 416 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 190 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: TO-247
 

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SFW025N100I3 Datasheet (PDF)

 ..1. Size:1427K  cn scilicon
 sfw025n100i3.pdf pdf_icon

SFW025N100I3

SFW025N100I3N-MOSFET 100V, 2.3m, 190AFeaturesProduct Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on) typ. 2.3m Fast SwitchingID190A100% DVDS TestedApplications100% Avalanche Tested Motor control and driveDC/DC Converter General Purpose ApplicationsDGSSFW025N100I3Package Marking and Ordering InformationPart # M

 4.1. Size:1437K  cn scilicon
 sfw025n100c3.pdf pdf_icon

SFW025N100I3

SFW025N100C3N-MOSFET 100V, 2.3m, 190AFeaturesProduct Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on) typ. 2.3m Fast SwitchingID190A100% DVDS TestedApplications100% Avalanche Tested Motor control and driveDC/DC Converter General Purpose ApplicationsDGSSFW025N100C3Package Marking and Ordering InformationPart # M

 9.1. Size:2812K  cn scilicon
 sfw024n100c3.pdf pdf_icon

SFW025N100I3

SFW024N100C3 N-MOSFET 100V, 2.0m, 210AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.0m DS(on) typ. Fast switchingI 210A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC

 9.2. Size:13679K  cn scilicon
 sfw027n100c3.pdf pdf_icon

SFW025N100I3

SFW027N100C3 N-MOSFET 100V, 2.2m, 190AFeature Product Summary High Speed Power SwitchingVDS100V Enhanced Body diode dv/dt capabilityRDS(on) typ. 2.2m Enhanced Avalanche RuggednessID190A100% DVDS TestedApplication100% Avalanche Tested Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Telecoms and InductrialD

MOSTRAR MÁS

Otros transistores... SFQ020N100C3 , SFQ030N100C3 , SFQ030N80C2 , SFQ230N100 , SFT016N80C3 , SFT018N100C3 , SFW024N100C3 , SFW025N100C3 , AON6380 , SFW027N100C3 , SFW031N100C3 , SFW042N100C3 , SFW043N150C3 , SFW072N150C2 , SFW082N165C3 , SFW095N200C3 , SFW097N200C3 .

History: NCEP11N10AGU | WMO50P04T1 | STB20N65M5 | 2SJ583LS | NP55N055SUG | WMN10N60C4 | WMK18N70EM

 

 
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