FDY100PZ Todos los transistores

 ..1. Size:177K  fairchild semi
 fdy100pz.pdf

January 2006 FDY100PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 350 mA, 20 V RDS(ON) = 1.2 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 1.6 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. A

 ..2. Size:291K  onsemi
 fdy100pz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:267K  fairchild semi
 fdy1002pz.pdf

October 2008 FDY1002PZ Dual P-Channel ( 1.5 V) Specified PowerTrench MOSFET 20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 A This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 A optimize the rDS(on)@VG

 8.2. Size:986K  onsemi
 fdy1002pz.pdf

2021/8/6 FAIR-S-A0002366002-1.pdf https //rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 1/7 2021/8/6 FAIR-S-A0002366002-1.pdf https //rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 2/7 2021/8/6 FAIR-S-A0002366002-1.pdf https //rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u

 9.1. Size:127K  fairchild semi
 fdy101pz.pdf

January 2006 FDY101PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 150 mA, 20 V RDS(ON) = 8 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 12 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD pro

 9.2. Size:203K  fairchild semi
 fdy102pz.pdf

February 2010 FDY102PZ tm Single P-Channel ( 1.5 V) Specified PowerTrench MOSFET 20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 A optimize the rDS(on)@