FDY100PZ
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDY100PZ
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.625
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.35
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package: SOT523F
FDY100PZ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDY100PZ
Datasheet (PDF)
..1. Size:177K fairchild semi
fdy100pz.pdf 
January 2006 FDY100PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 350 mA, 20 V RDS(ON) = 1.2 @ VGS = 4.5 V using Fairchild Semiconductors advanced Power RDS(ON) = 1.6 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. A
..2. Size:291K onsemi
fdy100pz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.1. Size:267K fairchild semi
fdy1002pz.pdf
October 2008FDY1002PZDual P-Channel (1.5 V) Specified PowerTrench MOSFET20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 AThis Dual P-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 Aoptimize the rDS(on)@VG
8.2. Size:986K onsemi
fdy1002pz.pdf
2021/8/6 FAIR-S-A0002366002-1.pdfhttps://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 1/72021/8/6 FAIR-S-A0002366002-1.pdfhttps://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 2/72021/8/6 FAIR-S-A0002366002-1.pdfhttps://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u
9.1. Size:127K fairchild semi
fdy101pz.pdf
January 2006FDY101PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 150 mA, 20 V RDS(ON) = 8 @ VGS = 4.5 V using Fairchild Semiconductors advanced PowerRDS(ON) = 12 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD pro
9.2. Size:203K fairchild semi
fdy102pz.pdf
February 2010FDY102PZtmSingle P-Channel (1.5 V) Specified PowerTrench MOSFET20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 AThis Single P-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 Aoptimize the rDS(on)@
Datasheet: FDT86113LZ
, SDU02N25
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, FDT86246
, FDU3N40
, SDT03N04
, FDV305N
, FDY1002PZ
, STP75NF75
, FDY101PZ
, FDY102PZ
, FDY2000PZ
, FDY3000NZ
, FDY300NZ
, FDY301NZ
, FDY302NZ
, FDY4000CZ
.
