FDY3000NZ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDY3000NZ  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm

Encapsulados: SOT563F

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FDY3000NZ datasheet

 ..1. Size:373K  fairchild semi
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FDY3000NZ

January 2007 January 2007 tm FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 850 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD protect

 ..2. Size:453K  onsemi
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FDY3000NZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:266K  fairchild semi
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FDY3000NZ

January 2007 January 2007 tm FDY300NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 850 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications E

 9.1. Size:222K  fairchild semi
fdy301nz.pdf pdf_icon

FDY3000NZ

January 2006 FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed 200 mA, 20 V RDS(ON) = 5 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 7 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD protection

Otros transistores... FDU3N40, SDT03N04, FDV305N, FDY1002PZ, FDY100PZ, FDY101PZ, FDY102PZ, FDY2000PZ, IRFP250N, FDY300NZ, FDY301NZ, FDY302NZ, FDY4000CZ, SDT02N02, FDZ1905PZ, FDZ191P, FDZ192NZ