FDY3000NZ Todos los transistores

 

FDY3000NZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDY3000NZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
   Paquete / Cubierta: SOT563F
 

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FDY3000NZ datasheet

 ..1. Size:373K  fairchild semi
 fdy3000nz.pdf pdf_icon

FDY3000NZ

January 2007 January 2007 tm FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 850 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD protect

 ..2. Size:453K  onsemi
 fdy3000nz.pdf pdf_icon

FDY3000NZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:266K  fairchild semi
 fdy300nz.pdf pdf_icon

FDY3000NZ

January 2007 January 2007 tm FDY300NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 850 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications E

 9.1. Size:222K  fairchild semi
 fdy301nz.pdf pdf_icon

FDY3000NZ

January 2006 FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed 200 mA, 20 V RDS(ON) = 5 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 7 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD protection

MOSTRAR MÁS

Otros transistores... FDU3N40 , SDT03N04 , FDV305N , FDY1002PZ , FDY100PZ , FDY101PZ , FDY102PZ , FDY2000PZ , IRF630 , FDY300NZ , FDY301NZ , FDY302NZ , FDY4000CZ , SDT02N02 , FDZ1905PZ , FDZ191P , FDZ192NZ .

 

 
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