FDY3000NZ Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDY3000NZ
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.625 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.3 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Qg ⓘ - Общий заряд затвора: 0.8 nC
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm
Тип корпуса: SOT563F
Аналог (замена) для FDY3000NZ
FDY3000NZ Datasheet (PDF)
fdy3000nz.pdf

January 2007January 2007tmFDY3000NZDual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 V using Fairchild Semiconductors advanced Power RDS(ON) = 850 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v.Applications ESD protect
fdy3000nz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdy300nz.pdf

January 2007January 2007tmFDY300NZSingle N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis Single N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 Vusing Fairchild Semiconductors advanced PowerRDS(ON) = 850 m @ VGS = 2.5 VTrench process to optimize the RDS(ON) @ VGS = 2.5v.Applications E
fdy301nz.pdf

January 2006 FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed 200 mA, 20 V RDS(ON) = 5 @ VGS = 4.5 V using Fairchild Semiconductors advanced Power RDS(ON) = 7 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD protection
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: FDY4000CZ | BUZ21 | BL5N50-U | 2SJ208 | KF5N25F | 2SK3666 | IRLMS6702
History: FDY4000CZ | BUZ21 | BL5N50-U | 2SJ208 | KF5N25F | 2SK3666 | IRLMS6702



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