MT04N005AL Todos los transistores

 

MT04N005AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MT04N005AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 125 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 130 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 50.7 nC
   Tiempo de subida (tr): 121 nS
   Conductancia de drenaje-sustrato (Cd): 824 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0052 Ohm
   Paquete / Cubierta: DPAK

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MT04N005AL Datasheet (PDF)

 ..1. Size:938K  jilin sino
mt04n005al.pdf

MT04N005AL
MT04N005AL

N N-CHANNEL MOSFET MT04N005AL MAIN CHARACTERISTICS Package ID 130A VDSS 40V Rdson-max - 4.9m (@Vgs=10V Qg-typ 50.7nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrup

 7.1. Size:436K  jilin sino
mt04n004b.pdf

MT04N005AL
MT04N005AL

N N-CHANNEL MOSFET MT04N004B MAIN CHARACTERISTICS Package ID 120A VDSS 40V Rdson-max - 4.0m (@Vgs=10V Qg-typ 72.7nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrupt

 9.1. Size:341K  champion
cmt04n60.pdf

MT04N005AL
MT04N005AL

CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on)efficiently. This new high energy device also offers a Lower Capacitancesdrain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switc

 9.2. Size:981K  way-on
wmt04n10ts.pdf

MT04N005AL
MT04N005AL

WMT04N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT04N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 3.5A DS DR

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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