MT04N005AL Specs and Replacement
Type Designator: MT04N005AL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 121 nS
Cossⓘ - Output Capacitance: 824 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: DPAK
MT04N005AL substitution
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MT04N005AL datasheet
mt04n005al.pdf
N N-CHANNEL MOSFET MT04N005AL MAIN CHARACTERISTICS Package ID 130A VDSS 40V Rdson-max - 4.9m (@Vgs=10V Qg-typ 50.7nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrup... See More ⇒
mt04n004b.pdf
N N-CHANNEL MOSFET MT04N004B MAIN CHARACTERISTICS Package ID 120A VDSS 40V Rdson-max - 4.0m (@Vgs=10V Qg-typ 72.7nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrupt... See More ⇒
cmt04n60.pdf
CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on) efficiently. This new high energy device also offers a Lower Capacitances drain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switc... See More ⇒
wmt04n10ts.pdf
WMT04N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMT04N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 3.5A DS D R ... See More ⇒
Detailed specifications: MS65R400RF, MS65R400RR, MS65R600F, MS65R600R, MS65R620RF, MS65R620RR, MT03N03FAL, MT04N004B, 7N60, MT06N005A, MT06N020A, MT06N020AL, MT20N024A, MT28N20A, MT40N20A, MT6JN008A, MT6JN009A
Keywords - MT04N005AL MOSFET specs
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