MT04N005AL MOSFET. Datasheet pdf. Equivalent
Type Designator: MT04N005AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50.7 nC
trⓘ - Rise Time: 121 nS
Cossⓘ - Output Capacitance: 824 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: DPAK
MT04N005AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MT04N005AL Datasheet (PDF)
mt04n005al.pdf
N N-CHANNEL MOSFET MT04N005AL MAIN CHARACTERISTICS Package ID 130A VDSS 40V Rdson-max - 4.9m (@Vgs=10V Qg-typ 50.7nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrup
mt04n004b.pdf
N N-CHANNEL MOSFET MT04N004B MAIN CHARACTERISTICS Package ID 120A VDSS 40V Rdson-max - 4.0m (@Vgs=10V Qg-typ 72.7nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrupt
cmt04n60.pdf
CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on)efficiently. This new high energy device also offers a Lower Capacitancesdrain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switc
wmt04n10ts.pdf
WMT04N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT04N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 3.5A DS DR
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