NCE0103 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE0103

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 24 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm

Encapsulados: SOT-23

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NCE0103 datasheet

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NCE0103

Pb Free Product http //www.ncepower.com NCE0103 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

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NCE0103

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NCE0103

Pb Free Product http //www.ncepower.com NCE0103Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

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NCE0103

NCE0102E http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102E uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I = 2A DS D R

Otros transistores... 2SK2049, A2N7002K, BSS123K, NCE0102A, NCE0102B, NCE0102E, NCE0102M, NCE0102Z, IRF730, NCE0104AN, NCE0104S, NCE0105M, NCE0106AR, NCE0107AK, NCE0115AK, NCE0117AK, NCE011N30GU