NCE0103 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE0103
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.5 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 20 nC
Время нарастания (tr): 4 ns
Выходная емкость (Cd): 24 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.17 Ohm
Тип корпуса: SOT-23
NCE0103 Datasheet (PDF)
nce0103.pdf
Pb Free Producthttp://www.ncepower.com NCE0103NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)
nce0103m.pdf
Pb Free Producthttp://www.ncepower.com NCE0103MNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A RDS(ON)
nce0103y.pdf
Pb Free Producthttp://www.ncepower.com NCE0103YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)
nce0102e.pdf
NCE0102Ehttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0102E uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I = 2ADS DR
nce0102m.pdf
Pb Free Producthttp://www.ncepower.com NCE0102MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)
nce0102z.pdf
Pb Free Producthttp://www.ncepower.com NCE0102ZNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)
nce0106ar.pdf
http://www.ncepower.com NCE0106ARNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A RDS(ON)
nce0104s.pdf
http://www.ncepower.comNCE0104SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0104S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =100V,I =4ADS DR
nce0108as.pdf
Pb Free ProductNCE0108AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =8A Schematic diagram RDS(ON)
nce0105m.pdf
http://www.ncepower.comNCE0105MNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0105M uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I = 5ADS DR
nce0102a.pdf
http://www.ncepower.com NCE0102ANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0102A uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 100V,ID = 2A RDS(ON)
nce0102.pdf
Pb Free Producthttp://www.ncepower.com NCE0102NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)
nce0107ak.pdf
Pb Free Producthttp://www.ncepower.com NCE0107AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0107AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 7A Schematic diagram RDS(ON)
nce0104an.pdf
http://www.ncepower.com NCE0104ANNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0104AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=100V,ID=4A Schematic diagram RDS(ON)
nce0102b.pdf
http://www.ncepower.com NCE0102BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102B uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features S VDS = 100V,ID = 1.8A RDS(ON)
nce0106r.pdf
Pb Free Producthttp://www.ncepower.com NCE0106RNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A Schematic diagram RDS(ON)
nce0106z.pdf
Pb Free Producthttp://www.ncepower.com NCE0106ZNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0106Z uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 100V,ID = 6A RDS(ON)
nce0108as.pdf
NCE0108ASwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSS
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