2SK2955 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2955
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 200 nS
Cossⓘ - Capacitancia de salida: 1050 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de 2SK2955 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK2955 datasheet
..1. Size:88K renesas
2sk2955.pdf 
2SK2955 Silicon N Channel MOS FET High Speed Power Switching REJ03G1055-0400 (Previous ADE-208-564B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.010 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1
..2. Size:286K inchange semiconductor
2sk2955.pdf
isc N-Channel MOSFET Transistor 2SK2955 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
0.1. Size:102K renesas
rej03g1055 2sk2955ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:87K 1
2sk2958stl.pdf
2SK2958(L), 2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1058-0400 (Previous ADE-208-568B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 5.5 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK
8.4. Size:430K toshiba
2sk2953.pdf
2SK2953 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2953 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.31 (typ.) High forward transfer admittance Yfs = 15 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VD
8.5. Size:414K toshiba
2sk2952.pdf
2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2952 Chopper Regulator Applications Unit mm Low drain-source ON resistance RDS = 0.4 (typ.) (ON) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 mA) DS D Maxi
8.6. Size:26K sanyo
2sk2951.pdf
Ordering number ENN6916 2SK2951 N-Channel Silicon MOSFET 2SK2951 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A [2SK2951] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications (Bottom view) Absolute Maximum Ratings at Ta=25 C Paramet
8.7. Size:84K renesas
2sk2957.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
8.8. Size:97K renesas
rej03g1059 2sk2959ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:100K renesas
2sk2958l-s.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.10. Size:102K renesas
rej03g1058 2sk2958lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.11. Size:83K renesas
2sk2959.pdf
2SK2959 Silicon N Channel MOS FET High Speed Power Switching REJ03G1059-0500 (Previous ADE-208-569C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 7 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3 Rev.5.00 Sep 0
8.12. Size:89K renesas
2sk2958.pdf
2SK2958(L), 2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1058-0400 (Previous ADE-208-568B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 5.5 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK
8.13. Size:201K renesas
2sk2957l-s.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.14. Size:47K hitachi
2sk2956.pdf
2SK2956 Silicon N Channel MOS FET High Speed Power Switching ADE-208-566B (Z) 3rd. Edition Jun 1998 Features Low on-resistance RDS(on) = 7m typ. 4V gate drive devices. High speed switching Outline TO 220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2956 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Ga
8.15. Size:282K inchange semiconductor
2sk2958l.pdf
isc N-Channel MOSFET Transistor 2SK2958L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 7.0m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.16. Size:282K inchange semiconductor
2sk2957l.pdf
isc N-Channel MOSFET Transistor 2SK2957L FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.17. Size:279K inchange semiconductor
2sk2956.pdf
isc N-Channel MOSFET Transistor 2SK2956 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.18. Size:356K inchange semiconductor
2sk2957s.pdf
isc N-Channel MOSFET Transistor 2SK2957S FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.19. Size:288K inchange semiconductor
2sk2959.pdf
isc N-Channel MOSFET Transistor 2SK2959 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.20. Size:274K inchange semiconductor
2sk2953.pdf
isc N-Channel MOSFET Transistor 2SK2953 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.21. Size:278K inchange semiconductor
2sk2954-mr.pdf
isc N-Channel MOSFET Transistor 2SK2954-MR FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.22. Size:288K inchange semiconductor
2sk295.pdf
isc N-Channel MOSFET Transistor 2SK295 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.56 (Max) @V =15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.23. Size:356K inchange semiconductor
2sk2958s.pdf
isc N-Channel MOSFET Transistor 2SK2958S FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 7.0m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
Otros transistores... 2SK2933, 2SK2934, 2SK2935, 2SK2936, 2SK2937, 2SK2938, 2SK2939, 2SK2940, 5N60, 2SK2956, 2SK2957, 2SK2958, 2SK2959, 2SK2978, 2SK2979, 2SK2980, 2SK3000
