2SK2955 - описание и поиск аналогов

 ..1. Size:88K  renesas
 2sk2955.pdf 

2SK2955 Silicon N Channel MOS FET High Speed Power Switching REJ03G1055-0400 (Previous ADE-208-564B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.010 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1

 ..2. Size:286K  inchange semiconductor
 2sk2955.pdf 

isc N-Channel MOSFET Transistor 2SK2955 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 0.1. Size:102K  renesas
 rej03g1055 2sk2955ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:231K  1
 2sk294 2sk295.pdf 

 8.2. Size:193K  1
 2sk2954-mr.pdf 

 8.3. Size:87K  1
 2sk2958stl.pdf 

2SK2958(L), 2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1058-0400 (Previous ADE-208-568B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 5.5 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK

 8.4. Size:430K  toshiba
 2sk2953.pdf 

2SK2953 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2953 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.31 (typ.) High forward transfer admittance Yfs = 15 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VD

 8.5. Size:414K  toshiba
 2sk2952.pdf 

2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2952 Chopper Regulator Applications Unit mm Low drain-source ON resistance RDS = 0.4 (typ.) (ON) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 mA) DS D Maxi

 8.6. Size:26K  sanyo
 2sk2951.pdf 

Ordering number ENN6916 2SK2951 N-Channel Silicon MOSFET 2SK2951 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A [2SK2951] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications (Bottom view) Absolute Maximum Ratings at Ta=25 C Paramet

 8.7. Size:84K  renesas
 2sk2957.pdf 

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.8. Size:97K  renesas
 rej03g1059 2sk2959ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:100K  renesas
 2sk2958l-s.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.10. Size:102K  renesas
 rej03g1058 2sk2958lsds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.11. Size:83K  renesas
 2sk2959.pdf 

2SK2959 Silicon N Channel MOS FET High Speed Power Switching REJ03G1059-0500 (Previous ADE-208-569C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 7 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3 Rev.5.00 Sep 0

 8.12. Size:89K  renesas
 2sk2958.pdf 

2SK2958(L), 2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1058-0400 (Previous ADE-208-568B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 5.5 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK

 8.13. Size:201K  renesas
 2sk2957l-s.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.14. Size:47K  hitachi
 2sk2956.pdf 

2SK2956 Silicon N Channel MOS FET High Speed Power Switching ADE-208-566B (Z) 3rd. Edition Jun 1998 Features Low on-resistance RDS(on) = 7m typ. 4V gate drive devices. High speed switching Outline TO 220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2956 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Ga

 8.15. Size:282K  inchange semiconductor
 2sk2958l.pdf 

isc N-Channel MOSFET Transistor 2SK2958L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 7.0m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.16. Size:282K  inchange semiconductor
 2sk2957l.pdf 

isc N-Channel MOSFET Transistor 2SK2957L FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.17. Size:279K  inchange semiconductor
 2sk2956.pdf 

isc N-Channel MOSFET Transistor 2SK2956 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.18. Size:356K  inchange semiconductor
 2sk2957s.pdf 

isc N-Channel MOSFET Transistor 2SK2957S FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.19. Size:288K  inchange semiconductor
 2sk2959.pdf 

isc N-Channel MOSFET Transistor 2SK2959 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.20. Size:274K  inchange semiconductor
 2sk2953.pdf 

isc N-Channel MOSFET Transistor 2SK2953 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.21. Size:278K  inchange semiconductor
 2sk2954-mr.pdf 

isc N-Channel MOSFET Transistor 2SK2954-MR FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.22. Size:288K  inchange semiconductor
 2sk295.pdf 

isc N-Channel MOSFET Transistor 2SK295 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.56 (Max) @V =15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.23. Size:356K  inchange semiconductor
 2sk2958s.pdf 

isc N-Channel MOSFET Transistor 2SK2958S FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 7.0m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid