NCE011N30GU MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCE011N30GU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE011N30GU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 147 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 325 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 1049 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: DFN5X6-8L

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NCE011N30GU datasheet

..1. Size:922K ncepower
nce011n30gu.pdf pdf_icon

NCE011N30GU http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE011N30GU uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =30V,I =325A DS(ON) DS D be used in a wide variety of applications. R =0.75m (typical) @ V =10V DS(ON) GS R =1.5m (typical) @ V =4.5V Application DS(ON) GS

8.1. Size:441K 1
nce0117k.pdf pdf_icon

NCE0117K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

8.2. Size:373K ncepower
nce0117.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE0117 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

8.3. Size:448K ncepower
nce0110ak.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE0110AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)

Otros transistores... NCE0103, NCE0104AN, NCE0104S, NCE0105M, NCE0106AR, NCE0107AK, NCE0115AK, NCE0117AK, 50N06, NCE0130GA, NCE0140AK2, NCE0140I2, NCE0140IA, NCE0157A, NCE0157A2D, NCE0157AK, NCE0157G

NCE011N30GU Todos los transistores