NCE011N30GU. Аналоги и основные параметры

Наименование производителя: NCE011N30GU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 147 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 325 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

Cossⓘ - Выходная емкость: 1049 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCE011N30GU

- подборⓘ MOSFET транзистора по параметрам

 

NCE011N30GU даташит

 ..1. Size:922K  ncepower
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NCE011N30GU

NCE011N30GU http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE011N30GU uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =30V,I =325A DS(ON) DS D be used in a wide variety of applications. R =0.75m (typical) @ V =10V DS(ON) GS R =1.5m (typical) @ V =4.5V Application DS(ON) GS

 8.1. Size:441K  1
nce0117k.pdfpdf_icon

NCE011N30GU

NCE0117K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 8.2. Size:373K  ncepower
nce0117.pdfpdf_icon

NCE011N30GU

Pb Free Product http //www.ncepower.com NCE0117 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 8.3. Size:448K  ncepower
nce0110ak.pdfpdf_icon

NCE011N30GU

Pb Free Product http //www.ncepower.com NCE0110AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)

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