NCE011N30GU - Даташиты. Аналоги. Основные параметры

NCE011N30GUhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE011N30GU uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =325ADS(ON) DS Dbe used in a wide variety of applications. R =0.75m (typical) @ V =10VDS(ON) GSR =1.5m (typical) @ V =4.5VApplication DS(ON) GS

NCE0117Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0117NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0110AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0115KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0115K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0110KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =9.6A RDS(ON)

NCE0117AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0117AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =100V,I =17ADS DR

Pb Free Producthttp://www.ncepower.com NCE0117KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

http://www.ncepower.com NCE0115AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0115AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)

Pb Free ProductNCE0110AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON)

NCE0117Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A Schematic diagram RDS(ON)

NCE0117www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXI