NCE0140I2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE0140I2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: TO-251

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NCE0140I2 datasheet

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NCE0140I2

http //www.ncepower.com NCE0140I2 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140I2 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I =40A DS D R

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nce0140ia.pdf pdf_icon

NCE0140I2

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NCE0140I2

Pb Free Product http //www.ncepower.com NCE0140K2 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140K2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 7.2. Size:628K  ncepower
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NCE0140I2

NCE0140AK2 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140AK2 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I =40A Schematic diagram DS D R

Otros transistores... NCE0105M, NCE0106AR, NCE0107AK, NCE0115AK, NCE0117AK, NCE011N30GU, NCE0130GA, NCE0140AK2, IRF640, NCE0140IA, NCE0157A, NCE0157A2D, NCE0157AK, NCE0157G, NCE0159, NCE0160AG, NCE0160G