NCE0140I2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE0140I2
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 140 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 40 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 94 nC
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 290 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.015 Ohm
Тип корпуса: TO-251
NCE0140I2 Datasheet (PDF)
nce0140i2.pdf
http://www.ncepower.comNCE0140I2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0140I2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =40ADS DR
nce0140ia.pdf
Pb Free ProductNCE0140IAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A Schematic diagram RDS(ON)
nce0140k2.pdf
Pb Free Producthttp://www.ncepower.com NCE0140K2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140K2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
nce0140ak2.pdf
NCE0140AK2http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0140AK2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =40A Schematic diagramDS DR
nce0140ka.pdf
Pb Free ProductNCE0140KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A Schematic diagram RDS(ON)
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C