NCE0157G Todos los transistores

 

NCE0157G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE0157G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

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NCE0157G Datasheet (PDF)

 ..1. Size:701K  ncepower
 nce0157g.pdf pdf_icon

NCE0157G

http://www.ncepower.comNCE0157GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =100V,I =57ADS(ON) DS Dused in a wide variety of applications. R

 7.1. Size:374K  ncepower
 nce0157.pdf pdf_icon

NCE0157G

Pb Free Producthttp://www.ncepower.com NCE0157NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 7.2. Size:631K  ncepower
 nce0157a2d.pdf pdf_icon

NCE0157G

Pb Free Producthttp://www.ncepower.comNCE0157A2DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2D uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

 7.3. Size:655K  ncepower
 nce0157a.pdf pdf_icon

NCE0157G

Pb Free Producthttp://www.ncepower.comNCE0157A2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

MOSTRAR MÁS

Otros transistores... NCE011N30GU , NCE0130GA , NCE0140AK2 , NCE0140I2 , NCE0140IA , NCE0157A , NCE0157A2D , NCE0157AK , 10N60 , NCE0159 , NCE0160AG , NCE0160G , NCE01H13D , NCE01NP03S , NCE01P05S , NCE01P13 , NCE01P13I .

History: 2SK3857MFV | ZXMP6A18KTC | STD3NK50Z | AON6413 | IXFN22N120 | KMA5D8DP20Q | NCEP020N30GU

 

 
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