FQA10N80CF109 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA10N80CF109
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 240 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
Encapsulados: TO3PN
Búsqueda de reemplazo de FQA10N80CF109 MOSFET
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FQA10N80CF109 datasheet
fqa10n80c.pdf
September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to
fqa10n80c f109.pdf
August 2007 QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to
fqa10n80c-f109.pdf
FQA10N80C-F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using ON Semiconductor s proprietary planar stripe and Low Gate Charge (Typ. 44 nC) DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF) been especiall
Otros transistores... FDZ191P , FDZ192NZ , FDZ193P , FDZ197PZ , FDZ371PZ , FDZ372NZ , FDZ375P , FDZ391P , K4145 , SDF08N50 , FQA11N90F109 , FQA11N90CF109 , FQA13N50CF , FQA13N80F109 , SDF07N80 , FQA140N10 , SDF07N65 .
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