FQA10N80CF109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQA10N80CF109 Datasheet (PDF)

5.1. Size:800K fairchild semi
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September 2006 QFETFQA10N80C800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

5.2. Size:806K fairchild semi
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August 2007 QFETFQA10N80C_F109800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

5.3. Size:1463K onsemi
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FQA10N80C-F109N-Channel QFET MOSFET800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using ON Semiconductors proprietary planar stripe and Low Gate Charge (Typ. 44 nC)DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF)been especiall

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