FQA10N80CF109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA10N80CF109
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 240 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de la puerta (Qg): 45 nC
Resistencia entre drenaje y fuente RDS(on): 1.1 Ohm
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de MOSFET FQA10N80CF109
FQA10N80CF109 Datasheet (PDF)
fqa10n80c.pdf
September 2006 QFETFQA10N80C800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to
fqa10n80c f109.pdf
August 2007 QFETFQA10N80C_F109800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to
fqa10n80c-f109.pdf
FQA10N80C-F109N-Channel QFET MOSFET800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using ON Semiconductors proprietary planar stripe and Low Gate Charge (Typ. 44 nC)DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF)been especiall
Otros transistores... FDZ191P , FDZ192NZ , FDZ193P , FDZ197PZ , FDZ371PZ , FDZ372NZ , FDZ375P , FDZ391P , IRF4905 , SDF08N50 , FQA11N90F109 , FQA11N90CF109 , FQA13N50CF , FQA13N80F109 , SDF07N80 , FQA140N10 , SDF07N65 .
