FQA10N80CF109 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA10N80CF109
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 240 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 45 nC
Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm
Package: TO3PN
FQA10N80CF109 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA10N80CF109 Datasheet (PDF)
fqa10n80c.pdf
September 2006 QFETFQA10N80C800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to
fqa10n80c f109.pdf
August 2007 QFETFQA10N80C_F109800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to
fqa10n80c-f109.pdf
FQA10N80C-F109N-Channel QFET MOSFET800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using ON Semiconductors proprietary planar stripe and Low Gate Charge (Typ. 44 nC)DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF)been especiall
Datasheet: FDZ191P , FDZ192NZ , FDZ193P , FDZ197PZ , FDZ371PZ , FDZ372NZ , FDZ375P , FDZ391P , IRF4905 , SDF08N50 , FQA11N90F109 , FQA11N90CF109 , FQA13N50CF , FQA13N80F109 , SDF07N80 , FQA140N10 , SDF07N65 .
