FQA10N80CF109 Specs and Replacement
Type Designator: FQA10N80CF109
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO3PN
FQA10N80CF109 substitution
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FQA10N80CF109 datasheet
fqa10n80c.pdf
September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to ... See More ⇒
fqa10n80c f109.pdf
August 2007 QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to... See More ⇒
fqa10n80c-f109.pdf
FQA10N80C-F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using ON Semiconductor s proprietary planar stripe and Low Gate Charge (Typ. 44 nC) DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF) been especiall... See More ⇒
Detailed specifications: FDZ191P, FDZ192NZ, FDZ193P, FDZ197PZ, FDZ371PZ, FDZ372NZ, FDZ375P, FDZ391P, K4145, SDF08N50, FQA11N90F109, FQA11N90CF109, FQA13N50CF, FQA13N80F109, SDF07N80, FQA140N10, SDF07N65
Keywords - FQA10N80CF109 MOSFET specs
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