NCE01P13 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE01P13
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52 nS
Cossⓘ - Capacitancia de salida: 86 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCE01P13 MOSFET
- Selecciónⓘ de transistores por parámetros
NCE01P13 datasheet
nce01p13.pdf
NCE01P13 http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)
nce01p13i.pdf
http //www.ncepower.com NCE01P13I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13I uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-13A Schematic diagram DS D R
nce01p13k.pdf
Pb Free Product http //www.ncepower.com NCE01P13K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)
nce01p18l.pdf
http //www.ncepower.com NCE01P18L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)
Otros transistores... NCE0157AK, NCE0157G, NCE0159, NCE0160AG, NCE0160G, NCE01H13D, NCE01NP03S, NCE01P05S, 2N7000, NCE01P13I, NCE01P18, NCE01P18L, NCE01P30D, NCE01P30I, NCE01P30K, NCE01P30L, NCE01P35K
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