All MOSFET. NCE01P13 Datasheet

 

NCE01P13 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE01P13
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 33.1 nC
   trⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO220

 NCE01P13 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE01P13 Datasheet (PDF)

 ..1. Size:307K  ncepower
 nce01p13.pdf

NCE01P13 NCE01P13

NCE01P13http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)

 0.1. Size:739K  ncepower
 nce01p13i.pdf

NCE01P13 NCE01P13

http://www.ncepower.comNCE01P13INCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P13I uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-13A Schematic diagramDS DR

 0.2. Size:400K  ncepower
 nce01p13k.pdf

NCE01P13 NCE01P13

Pb Free Producthttp://www.ncepower.com NCE01P13KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)

 7.1. Size:343K  ncepower
 nce01p18l.pdf

NCE01P13 NCE01P13

http://www.ncepower.com NCE01P18LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 7.2. Size:562K  ncepower
 nce01p18d.pdf

NCE01P13 NCE01P13

http://www.ncepower.com NCE01P18DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 7.3. Size:713K  ncepower
 nce01p18.pdf

NCE01P13 NCE01P13

http://www.ncepower.comNCE01P18NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P18 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-18A Schematic diagramDS DR

 7.4. Size:430K  ncepower
 nce01p18k.pdf

NCE01P13 NCE01P13

Pb Free Producthttp://www.ncepower.com NCE01P18KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: VBJ1201K | AO8806 | FQI27N25 | IPP065N04NG | APT60M75JVR | APTC90AM60SCTG

 

 
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