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NCE01P18 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE01P18
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 70 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 18 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 61 nC
   Tiempo de subida (tr): 73 nS
   Conductancia de drenaje-sustrato (Cd): 99 pF
   Resistencia entre drenaje y fuente RDS(on): 0.1 Ohm
   Paquete / Cubierta: TO220

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NCE01P18 Datasheet (PDF)

 ..1. Size:713K  ncepower
nce01p18.pdf

NCE01P18
NCE01P18

http://www.ncepower.comNCE01P18NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P18 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-18A Schematic diagramDS DR

 0.1. Size:343K  ncepower
nce01p18l.pdf

NCE01P18
NCE01P18

http://www.ncepower.com NCE01P18LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 0.2. Size:562K  ncepower
nce01p18d.pdf

NCE01P18
NCE01P18

http://www.ncepower.com NCE01P18DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 0.3. Size:430K  ncepower
nce01p18k.pdf

NCE01P18
NCE01P18

Pb Free Producthttp://www.ncepower.com NCE01P18KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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