NCE01P18 Specs and Replacement

Type Designator: NCE01P18

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220

NCE01P18 substitution

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NCE01P18 datasheet

 ..1. Size:713K  ncepower
 nce01p18.pdf pdf_icon

NCE01P18

http //www.ncepower.com NCE01P18 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-18A Schematic diagram DS D R ... See More ⇒

 0.1. Size:343K  ncepower
 nce01p18l.pdf pdf_icon

NCE01P18

http //www.ncepower.com NCE01P18L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON) ... See More ⇒

 0.2. Size:562K  ncepower
 nce01p18d.pdf pdf_icon

NCE01P18

http //www.ncepower.com NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON) ... See More ⇒

 0.3. Size:430K  ncepower
 nce01p18k.pdf pdf_icon

NCE01P18

Pb Free Product http //www.ncepower.com NCE01P18K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON) ... See More ⇒

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Detailed specifications: NCE0159, NCE0160AG, NCE0160G, NCE01H13D, NCE01NP03S, NCE01P05S, NCE01P13, NCE01P13I, 8205A, NCE01P18L, NCE01P30D, NCE01P30I, NCE01P30K, NCE01P30L, NCE01P35K, NCE0203S, NCE0205IA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.