NCE01P18L Todos los transistores

 

NCE01P18L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE01P18L
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 129 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: TO-251
 

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NCE01P18L Datasheet (PDF)

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NCE01P18L

http://www.ncepower.com NCE01P18LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 6.1. Size:562K  ncepower
 nce01p18d.pdf pdf_icon

NCE01P18L

http://www.ncepower.com NCE01P18DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 6.2. Size:713K  ncepower
 nce01p18.pdf pdf_icon

NCE01P18L

http://www.ncepower.comNCE01P18NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P18 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-18A Schematic diagramDS DR

 6.3. Size:430K  ncepower
 nce01p18k.pdf pdf_icon

NCE01P18L

Pb Free Producthttp://www.ncepower.com NCE01P18KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE0160AG , NCE0160G , NCE01H13D , NCE01NP03S , NCE01P05S , NCE01P13 , NCE01P13I , NCE01P18 , STP75NF75 , NCE01P30D , NCE01P30I , NCE01P30K , NCE01P30L , NCE01P35K , NCE0203S , NCE0205IA , NCE0208IA .

History: IPD031N03L

 

 
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