NCE01P18L Specs and Replacement

Type Designator: NCE01P18L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 129 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO-251

NCE01P18L substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE01P18L datasheet

 ..1. Size:343K  ncepower
nce01p18l.pdf pdf_icon

NCE01P18L

http //www.ncepower.com NCE01P18L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON) ... See More ⇒

 6.1. Size:562K  ncepower
nce01p18d.pdf pdf_icon

NCE01P18L

http //www.ncepower.com NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON) ... See More ⇒

 6.2. Size:713K  ncepower
nce01p18.pdf pdf_icon

NCE01P18L

http //www.ncepower.com NCE01P18 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-18A Schematic diagram DS D R ... See More ⇒

 6.3. Size:430K  ncepower
nce01p18k.pdf pdf_icon

NCE01P18L

Pb Free Product http //www.ncepower.com NCE01P18K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: NCE0160AG, NCE0160G, NCE01H13D, NCE01NP03S, NCE01P05S, NCE01P13, NCE01P13I, NCE01P18, 7N65, NCE01P30D, NCE01P30I, NCE01P30K, NCE01P30L, NCE01P35K, NCE0203S, NCE0205IA, NCE0208IA

Keywords - NCE01P18L MOSFET specs

 NCE01P18L cross reference

 NCE01P18L equivalent finder

 NCE01P18L pdf lookup

 NCE01P18L substitution

 NCE01P18L replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs