NCE0203S Todos los transistores

 

NCE0203S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE0203S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 38 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 163 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.079 Ohm
   Paquete / Cubierta: SOP8
 

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NCE0203S Datasheet (PDF)

 ..1. Size:324K  ncepower
 nce0203s.pdf pdf_icon

NCE0203S

Pb Free Producthttp://www.ncepower.com NCE0203SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)

 8.1. Size:305K  ncepower
 nce0205ia.pdf pdf_icon

NCE0203S

http://www.ncepower.com NCE0205IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)

 8.2. Size:287K  ncepower
 nce0202za.pdf pdf_icon

NCE0203S

Pb Free Producthttp://www.ncepower.com NCE0202ZANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0202ZA uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)

 8.3. Size:322K  ncepower
 nce0208ia.pdf pdf_icon

NCE0203S

Pb Free Producthttp://www.ncepower.com NCE0208IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE01P13I , NCE01P18 , NCE01P18L , NCE01P30D , NCE01P30I , NCE01P30K , NCE01P30L , NCE01P35K , 12N60 , NCE0205IA , NCE0208IA , NCE0224A , NCE0224AF , NCE0224AK , NCE0224DA , NCE0224F , NCE0250D .

History: SHD218505B | SI8800EDB | HY3208APS | AP04N80R-HF | OSG65R2K4PF | ME4920 | RQK0302GGDQS

 

 
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