Справочник MOSFET. NCE0203S

 

NCE0203S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0203S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 163 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.079 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для NCE0203S

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0203S Datasheet (PDF)

 ..1. Size:324K  ncepower
nce0203s.pdfpdf_icon

NCE0203S

Pb Free Producthttp://www.ncepower.com NCE0203SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)

 8.1. Size:305K  ncepower
nce0205ia.pdfpdf_icon

NCE0203S

http://www.ncepower.com NCE0205IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)

 8.2. Size:287K  ncepower
nce0202za.pdfpdf_icon

NCE0203S

Pb Free Producthttp://www.ncepower.com NCE0202ZANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0202ZA uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)

 8.3. Size:322K  ncepower
nce0208ia.pdfpdf_icon

NCE0203S

Pb Free Producthttp://www.ncepower.com NCE0208IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

Другие MOSFET... NCE01P13I , NCE01P18 , NCE01P18L , NCE01P30D , NCE01P30I , NCE01P30K , NCE01P30L , NCE01P35K , 12N60 , NCE0205IA , NCE0208IA , NCE0224A , NCE0224AF , NCE0224AK , NCE0224DA , NCE0224F , NCE0250D .

History: 2SK1450 | 2SK681A | BSC035N04LSG | PB210BC | NP88N055NLE | NCE01P30K | STN4260

 

 
Back to Top

 


 
.