NCE0205IA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE0205IA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.58 Ohm

Encapsulados: TO-251

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NCE0205IA datasheet

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 nce0205ia.pdf pdf_icon

NCE0205IA

http //www.ncepower.com NCE0205IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)

 8.1. Size:287K  ncepower
 nce0202za.pdf pdf_icon

NCE0205IA

Pb Free Product http //www.ncepower.com NCE0202ZA NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0202ZA uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 200V,ID =2A RDS(ON)

 8.2. Size:322K  ncepower
 nce0208ia.pdf pdf_icon

NCE0205IA

Pb Free Product http //www.ncepower.com NCE0208IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.3. Size:433K  ncepower
 nce0208ka.pdf pdf_icon

NCE0205IA

Pb Free Product http //www.ncepower.com NCE0208KA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE01P18, NCE01P18L, NCE01P30D, NCE01P30I, NCE01P30K, NCE01P30L, NCE01P35K, NCE0203S, 2N7002, NCE0208IA, NCE0224A, NCE0224AF, NCE0224AK, NCE0224DA, NCE0224F, NCE0250D, NCE0260P