NCE0224A Todos los transistores

 

NCE0224A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE0224A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 163 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO220
 

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NCE0224A Datasheet (PDF)

 ..1. Size:338K  ncepower
 nce0224a.pdf pdf_icon

NCE0224A

Pb Free ProductNCE0224Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 0.1. Size:314K  ncepower
 nce0224af.pdf pdf_icon

NCE0224A

Pb Free ProductNCE0224AFhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 0.2. Size:389K  ncepower
 nce0224ak.pdf pdf_icon

NCE0224A

Pb Free ProductNCE0224AKhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 7.1. Size:326K  ncepower
 nce0224f.pdf pdf_icon

NCE0224A

http://www.ncepower.com NCE0224FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE01P30D , NCE01P30I , NCE01P30K , NCE01P30L , NCE01P35K , NCE0203S , NCE0205IA , NCE0208IA , IRF4905 , NCE0224AF , NCE0224AK , NCE0224DA , NCE0224F , NCE0250D , NCE0260P , NCE0260T , NCE0270T .

History: NX3008PBKS | AON6572 | NP84N055KLE | IPD06N03LBG | NCEAP018N60GU | H5N5016PL | AON6458

 

 
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