NCE0224DA Todos los transistores

 

NCE0224DA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE0224DA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 163 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO263
 

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NCE0224DA Datasheet (PDF)

 ..1. Size:342K  ncepower
 nce0224da.pdf pdf_icon

NCE0224DA

Pb Free Producthttp://www.ncepower.com NCE0224DANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224DA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 6.1. Size:344K  ncepower
 nce0224d.pdf pdf_icon

NCE0224DA

Pb Free Producthttp://www.ncepower.com NCE0224DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 7.1. Size:326K  ncepower
 nce0224f.pdf pdf_icon

NCE0224DA

http://www.ncepower.com NCE0224FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 7.2. Size:314K  ncepower
 nce0224af.pdf pdf_icon

NCE0224DA

Pb Free ProductNCE0224AFhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE01P30L , NCE01P35K , NCE0203S , NCE0205IA , NCE0208IA , NCE0224A , NCE0224AF , NCE0224AK , SPP20N60C3 , NCE0224F , NCE0250D , NCE0260P , NCE0260T , NCE0270T , NCE0275 , NCE0275D , NCE02P20K .

History: HGS650N15S | IXTY1N80 | AM6411P | IRF7484Q | BSC072N04LD | AON6520 | SM3106NSU

 

 
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