Справочник MOSFET. NCE0224DA

 

NCE0224DA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0224DA
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 163 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для NCE0224DA

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0224DA Datasheet (PDF)

 ..1. Size:342K  ncepower
 nce0224da.pdf pdf_icon

NCE0224DA

Pb Free Producthttp://www.ncepower.com NCE0224DANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224DA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 6.1. Size:344K  ncepower
 nce0224d.pdf pdf_icon

NCE0224DA

Pb Free Producthttp://www.ncepower.com NCE0224DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 7.1. Size:326K  ncepower
 nce0224f.pdf pdf_icon

NCE0224DA

http://www.ncepower.com NCE0224FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 7.2. Size:314K  ncepower
 nce0224af.pdf pdf_icon

NCE0224DA

Pb Free ProductNCE0224AFhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE01P30L , NCE01P35K , NCE0203S , NCE0205IA , NCE0208IA , NCE0224A , NCE0224AF , NCE0224AK , SPP20N60C3 , NCE0224F , NCE0250D , NCE0260P , NCE0260T , NCE0270T , NCE0275 , NCE0275D , NCE02P20K .

History: 2SK399 | AP73T03AGM-HF | IXFH96N20P | AP60P20Q | SL2302 | NTD4805N-1G | STFI34N65M5

 

 
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