NCE0224F Todos los transistores

 

NCE0224F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE0224F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 87.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO-220F
 

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NCE0224F Datasheet (PDF)

 ..1. Size:326K  ncepower
 nce0224f.pdf pdf_icon

NCE0224F

http://www.ncepower.com NCE0224FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 7.1. Size:314K  ncepower
 nce0224af.pdf pdf_icon

NCE0224F

Pb Free ProductNCE0224AFhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 7.2. Size:319K  ncepower
 nce0224.pdf pdf_icon

NCE0224F

NCE0224http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =200V,ID =24A RDS(ON)

 7.3. Size:344K  ncepower
 nce0224d.pdf pdf_icon

NCE0224F

Pb Free Producthttp://www.ncepower.com NCE0224DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE01P35K , NCE0203S , NCE0205IA , NCE0208IA , NCE0224A , NCE0224AF , NCE0224AK , NCE0224DA , 8205A , NCE0250D , NCE0260P , NCE0260T , NCE0270T , NCE0275 , NCE0275D , NCE02P20K , NCE035P40GU .

History: VBP18R15S | IPD60R1K5CE | CHM4435AZGP | IXFH60N20F | ME2604-G | NTMFS4C054N | 2SJ201

 

 
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