Справочник MOSFET. NCE0224F

 

NCE0224F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0224F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 87.2 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для NCE0224F

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0224F Datasheet (PDF)

 ..1. Size:326K  ncepower
nce0224f.pdfpdf_icon

NCE0224F

http://www.ncepower.com NCE0224FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 7.1. Size:314K  ncepower
nce0224af.pdfpdf_icon

NCE0224F

Pb Free ProductNCE0224AFhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 7.2. Size:319K  ncepower
nce0224.pdfpdf_icon

NCE0224F

NCE0224http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =200V,ID =24A RDS(ON)

 7.3. Size:344K  ncepower
nce0224d.pdfpdf_icon

NCE0224F

Pb Free Producthttp://www.ncepower.com NCE0224DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

Другие MOSFET... NCE01P35K , NCE0203S , NCE0205IA , NCE0208IA , NCE0224A , NCE0224AF , NCE0224AK , NCE0224DA , 8205A , NCE0250D , NCE0260P , NCE0260T , NCE0270T , NCE0275 , NCE0275D , NCE02P20K , NCE035P40GU .

History: DMN3200U | BUK7Y3R5-40H | 2SK2376 | IXTJ36N20 | CHM4435AZGP | PE506BA | NCE0159

 

 
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