NCE15P25 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE15P25

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 148 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de NCE15P25 MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE15P25 datasheet

 ..1. Size:432K  ncepower
nce15p25.pdf pdf_icon

NCE15P25

http //www.ncepower.com NCE15P25 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS D RDS(ON)

 0.1. Size:532K  ncepower
nce15p25j.pdf pdf_icon

NCE15P25

http //www.ncepower.com NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS D RDS(ON)

 0.2. Size:527K  ncepower
nce15p25i.pdf pdf_icon

NCE15P25

http //www.ncepower.com NCE15P25I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS D Schematic diagram RDS(ON)

 0.3. Size:517K  ncepower
nce15p25jk.pdf pdf_icon

NCE15P25

NCE15P25JK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JK uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS D RDS(ON)

Otros transistores... NCE1520K, NCE1520KA, NCE1540AD, NCE1540AF, NCE1540KA, NCE1550F, NCE15H10, NCE15H10A, SI2302, NCE15P25I, NCE15P25J, NCE15P25JI, NCE15P25JK, NCE15P30, NCE15P30K, NCE1608N, NCE16P07J