FQA13N80F109 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA13N80F109 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Encapsulados: TO3PN
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FQA13N80F109 datasheet
fqa13n80.pdf
March 2001 TM QFET FQA13N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 68 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailore
fqa13n80 f109.pdf
July 2007 QFET FQA13N80_F109 800V N-Channel MOSFET Features Description 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 68 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especially tailored to
fqa13n80-f109.pdf
FQA13N80-F109 N-Channel QFET MOSFET 800 V, 12.6 A, 750 m Features 12.6 A, 800 V, RDS(on) = 750 m (Max.) @ VGS = 10 V, Description ID = 6.3 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 68 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 30 pF) planar stripe and DMOS technology. This advanced MOSFET technology has be
Otros transistores... FDZ372NZ, FDZ375P, FDZ391P, FQA10N80CF109, SDF08N50, FQA11N90F109, FQA11N90CF109, FQA13N50CF, IRF1010E, SDF07N80, FQA140N10, SDF07N65, FQA160N08, FQA170N06, FQA19N60, SDF07N50T, FQA24N60
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