FQA13N80F109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQA13N80F109 Datasheet (PDF)

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March 2001 TM QFET FQA13N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 68 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailore

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July 2007 QFET FQA13N80_F109 800V N-Channel MOSFET Features Description 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 68 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especially tailored to

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FQA13N80-F109 N-Channel QFET MOSFET 800 V, 12.6 A, 750 m Features 12.6 A, 800 V, RDS(on) = 750 m (Max.) @ VGS = 10 V, Description ID = 6.3 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 68 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 30 pF) planar stripe and DMOS technology. This advanced MOSFET technology has be

Otros transistores... FDZ372NZ , FDZ375P , FDZ391P , FQA10N80CF109 , SDF08N50 , FQA11N90F109 , FQA11N90CF109 , FQA13N50CF , IRF1010E , SDF07N80 , FQA140N10 , SDF07N65 , FQA160N08 , FQA170N06 , FQA19N60 , SDF07N50T , FQA24N60 .