FQA13N80F109 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA13N80F109
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 68 nC
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO3PN
FQA13N80F109 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA13N80F109 Datasheet (PDF)
fqa13n80.pdf
March 2001TMQFETFQA13N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 68 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailore
fqa13n80 f109.pdf
July 2007 QFETFQA13N80_F109800V N-Channel MOSFETFeatures Description 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 68 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especially tailored to
fqa13n80-f109.pdf
FQA13N80-F109N-Channel QFET MOSFET800 V, 12.6 A, 750 m Features 12.6 A, 800 V, RDS(on) = 750 m (Max.) @ VGS = 10 V,DescriptionID = 6.3 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 68 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 30 pF)planar stripe and DMOS technology. This advanced MOSFET technology has be
Datasheet: FDZ372NZ , FDZ375P , FDZ391P , FQA10N80CF109 , SDF08N50 , FQA11N90F109 , FQA11N90CF109 , FQA13N50CF , MMIS60R580P , SDF07N80 , FQA140N10 , SDF07N65 , FQA160N08 , FQA170N06 , FQA19N60 , SDF07N50T , FQA24N60 .
