FQA13N80F109 Specs and Replacement
Type Designator: FQA13N80F109
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO3PN
FQA13N80F109 substitution
- MOSFET ⓘ Cross-Reference Search
FQA13N80F109 datasheet
fqa13n80.pdf
March 2001 TM QFET FQA13N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 68 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailore... See More ⇒
fqa13n80 f109.pdf
July 2007 QFET FQA13N80_F109 800V N-Channel MOSFET Features Description 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 68 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especially tailored to... See More ⇒
fqa13n80-f109.pdf
FQA13N80-F109 N-Channel QFET MOSFET 800 V, 12.6 A, 750 m Features 12.6 A, 800 V, RDS(on) = 750 m (Max.) @ VGS = 10 V, Description ID = 6.3 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 68 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 30 pF) planar stripe and DMOS technology. This advanced MOSFET technology has be... See More ⇒
Detailed specifications: FDZ372NZ, FDZ375P, FDZ391P, FQA10N80CF109, SDF08N50, FQA11N90F109, FQA11N90CF109, FQA13N50CF, IRF1010E, SDF07N80, FQA140N10, SDF07N65, FQA160N08, FQA170N06, FQA19N60, SDF07N50T, FQA24N60
Keywords - FQA13N80F109 MOSFET specs
FQA13N80F109 cross reference
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