NCE1608N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE1608N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 16 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: SOT23-6L

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NCE1608N datasheet

 ..1. Size:320K  ncepower
 nce1608n.pdf pdf_icon

NCE1608N

http //www.ncepower.com NCE1608N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1608N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 16V,ID =8A

 8.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf pdf_icon

NCE1608N

NCE160ED120VTP4 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 16

 8.2. Size:1569K  ncepower
 nce160ed65vtp.pdf pdf_icon

NCE1608N

NCE160ED65VTP 650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC

 8.3. Size:1602K  ncepower
 nce160ed120vtp.pdf pdf_icon

NCE1608N

NCE160ED120VTP 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 160

MOSTRAR MÁS

Otros transistores... NCE15H10A, NCE15P25, NCE15P25I, NCE15P25J, NCE15P25JI, NCE15P25JK, NCE15P30, NCE15P30K, IRFZ24N, NCE16P07J, NCE16P40Q, NCE1805S, NCE1810AK, NCE1826K, NCE2004Y, NCE2006Y, NCE2012