All MOSFET. NCE1608N Datasheet

 

NCE1608N Datasheet and Replacement


   Type Designator: NCE1608N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOT23-6L
 

 NCE1608N substitution

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NCE1608N Datasheet (PDF)

 ..1. Size:320K  ncepower
 nce1608n.pdf pdf_icon

NCE1608N

http://www.ncepower.com NCE1608NNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1608N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 16V,ID =8A

 8.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf pdf_icon

NCE1608N

NCE160ED120VTP41200V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench FS Gen.7 Technology Offering Low saturation voltage: V = 1.6V(Typ.) @ IC = 16

 8.2. Size:1569K  ncepower
 nce160ed65vtp.pdf pdf_icon

NCE1608N

NCE160ED65VTP650V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC

 8.3. Size:1602K  ncepower
 nce160ed120vtp.pdf pdf_icon

NCE1608N

NCE160ED120VTP1200V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench FS Gen.7 Technology Offering Low saturation voltage: V = 1.6V(Typ.) @ IC = 160

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Datasheet: NCE15H10A , NCE15P25 , NCE15P25I , NCE15P25J , NCE15P25JI , NCE15P25JK , NCE15P30 , NCE15P30K , IRFZ24N , NCE16P07J , NCE16P40Q , NCE1805S , NCE1810AK , NCE1826K , NCE2004Y , NCE2006Y , NCE2012 .

History: MTN2510LE3 | STW70N60M2 | STW69N65M5-4 | STW57N65M5-4 | AM7302N | IRFBE20PBF | AP2611GYT-HF

Keywords - NCE1608N MOSFET datasheet

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