NCE1608N Datasheet and Replacement. Cross Reference Search

NCE1608N Datasheet (PDF)

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http://www.ncepower.com NCE1608NNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1608N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 16V,ID =8A

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NCE160ED120VTP41200V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench FS Gen.7 Technology Offering Low saturation voltage: V = 1.6V(Typ.) @ IC = 16

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NCE160ED65VTP650V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC

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nce160ed120vtp.pdf pdf_icon

NCE160ED120VTP1200V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench FS Gen.7 Technology Offering Low saturation voltage: V = 1.6V(Typ.) @ IC = 160