NCE1608N Specs and Replacement

Type Designator: NCE1608N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: SOT23-6L

NCE1608N substitution

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NCE1608N datasheet

 ..1. Size:320K  ncepower
 nce1608n.pdf pdf_icon

NCE1608N

http //www.ncepower.com NCE1608N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1608N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 16V,ID =8A ... See More ⇒

 8.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf pdf_icon

NCE1608N

NCE160ED120VTP4 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 16... See More ⇒

 8.2. Size:1569K  ncepower
 nce160ed65vtp.pdf pdf_icon

NCE1608N

NCE160ED65VTP 650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC... See More ⇒

 8.3. Size:1602K  ncepower
 nce160ed120vtp.pdf pdf_icon

NCE1608N

NCE160ED120VTP 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 160... See More ⇒

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Detailed specifications: NCE15H10A, NCE15P25, NCE15P25I, NCE15P25J, NCE15P25JI, NCE15P25JK, NCE15P30, NCE15P30K, IRFZ24N, NCE16P07J, NCE16P40Q, NCE1805S, NCE1810AK, NCE1826K, NCE2004Y, NCE2006Y, NCE2012

Keywords - NCE1608N MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs