NCE16P07J Todos los transistores

 ..1. Size:738K  ncepower
 nce16p07j.pdf

http //www.ncepower.com NCE16P07J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE16P07J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -16V,I = -

 8.1. Size:742K  ncepower
 nce16p40q.pdf

http //www.ncepower.com NCE16P40Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE16P40Q uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -15A DS D or power management. R

 9.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf

NCE160ED120VTP4 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 16

 9.2. Size:320K  ncepower
 nce1608n.pdf

http //www.ncepower.com NCE1608N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1608N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 16V,ID =8A

 9.3. Size:1569K  ncepower
 nce160ed65vtp.pdf

NCE160ED65VTP 650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC

 9.4. Size:1602K  ncepower
 nce160ed120vtp.pdf

NCE160ED120VTP 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 160

 9.5. Size:1532K  ncepower
 nce160ed65vtp4.pdf

NCE160ED65VTP4 650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ I