NCE16P07J. Аналоги и основные параметры

Наименование производителя: NCE16P07J

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 16 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 32 ns

Cossⓘ - Выходная емкость: 164 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm

Тип корпуса: DFN2X2-6L

Аналог (замена) для NCE16P07J

- подборⓘ MOSFET транзистора по параметрам

 

NCE16P07J даташит

 ..1. Size:738K  ncepower
 nce16p07j.pdf pdf_icon

NCE16P07J

http //www.ncepower.com NCE16P07J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE16P07J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -16V,I = -

 8.1. Size:742K  ncepower
 nce16p40q.pdf pdf_icon

NCE16P07J

http //www.ncepower.com NCE16P40Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE16P40Q uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -15A DS D or power management. R

 9.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf pdf_icon

NCE16P07J

NCE160ED120VTP4 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 16

 9.2. Size:320K  ncepower
 nce1608n.pdf pdf_icon

NCE16P07J

http //www.ncepower.com NCE1608N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1608N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 16V,ID =8A

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE15P25, NCE15P25I, NCE15P25J, NCE15P25JI, NCE15P25JK, NCE15P30, NCE15P30K, NCE1608N, 2N60, NCE16P40Q, NCE1805S, NCE1810AK, NCE1826K, NCE2004Y, NCE2006Y, NCE2012, NCE2013J