NCE1826K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE1826K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 185 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 90.7 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO252

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NCE1826K Datasheet (PDF)

..1. Size:388K ncepower
nce1826k.pdf

Pb Free Producthttp://www.ncepower.com NCE1826KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1826K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =185V,ID =26A RDS(ON)

9.1. Size:384K ncepower
nce1810ak.pdf

Pb Free Producthttp://www.ncepower.com NCE1810AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1810AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =180V,ID =10A Schematic diagram RDS(ON)

9.2. Size:331K ncepower
nce1805s.pdf

Pb Free Producthttp://www.ncepower.com NCE1805SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1805S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =185V,ID =5A RDS(ON)

9.3. Size:295K ncepower
nce18nd11u.pdf

NCE18ND11Uhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE18ND11U uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =18V,ID =11A RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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